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NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPX 81
Wesentliche Merkmale * Speziell geeignet fur Anwendungen im Bereich von 440 nm bis 1070 nm * Hohe Linearitat * Einstellige Zeilenbauform aus klarem Epoxy * Gruppiert lieferbar Anwendungen * Computer-Blitzlichtgerate * Miniaturlichtschranken fur Gleich- und Wechsellichtbetrieb * Industrieelektronik * Messen/Steuern/Regeln" Typ Type BPX 81 BPX 81-2/3 BPX 81-3 BPX 81-3/4 BPX 81-4 Bestellnummer Ordering Code Q62702-P20 Q62702-P3583 Q62702-P43-S3 Q62702-P3584 Q62702-P43-S4
Features * Especially suitable for applications from 440 nm to 1070 nm * High linearity * One-digit array package of transparent epoxy * Available in groups Applications * * * * Computer-controlled flashes Miniature photointerrupters Industrial electronics For control and drive circuits
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BPX 81
Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 3 s Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Iron soldering temperature 2 mm distance from case bottom, soldering time t 5 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 40 ... + 80 230 Einheit Unit C C
Top; Tstg TS
TS
300
C
VCE IC ICS Ptot RthJA
32 50 200 90 750
V mA mA mW K/W
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BPX 81
Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 25 V, E = 0 Symbol Symbol S max Wert Value 850 440 ... 1070 Einheit Unit nm nm
A LxB LxW H
0.17 0.6 x 0.6 1.3 ... 1.9 18 6
mm2 mm x mm mm Grad deg. pF
CCE
ICEO
25 ( 200)
nA
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BPX 81
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3 Ee = 0.5 mW/cm2
1) 1)
Symbol Symbol -2
Wert Value -3 -4
Einheit Unit
IPCE IPCE tr, tf
0.25 ... 0.50 1.4 5.5
0.40 ... 0.80 2.2 6
0.63 3.4 8
mA mA s
VCEsat
150
150
150
mV
IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. IPCEmin is the min. photocurrent of the specified group.
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BPX 81
Relative Spectral Sensitivity Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total Power Dissipation Ptot = f (TA)
Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V
Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz, E = 0
Dark Current
ICEO = f (VCE), E = 0
Directional Characteristics Srel = f ()
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BPX 81
Mazeichnung Package Outlines
2.7 (0.106) 2.5 (0.098)
2.4 (0.094) 2.1 (0.083)
3.5 (0.138)
0.7 (0.028) 0.6 (0.024)
0.25 (0.010) 0.15 (0.006) 0 ... 5
2.1 (0.083)
1.5 (0.059) A 2.54 (0.100) spacing 0.4 A Radiant sensitive area (0.4 x 0.4) 1.4 (0.055) 1.0 (0.039) Collector (BPX 81) Cathode (LD 261) 1) Detaching area for tools, flash not true to size.
GEOY6021
Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
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3.0 (0.118)
0.5 (0.020) 0.4 (0.016)
1.9 (0.075) 1.7 (0.067)
3.6 (0.142) 3.2 (0.126)
Chip position

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